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? semiconductor components industries, llc, 2017 april, 2018 ? rev. 2 1 publication order number: ncp115/d ncp115 300 ma cmos low dropout regulator the ncp115 is 300 ma ldo that provides the engineer with a very stable, accurate voltage with low noise suitable for space constrained, noise sensitive applications. in order to optimize performance for battery operated portable applications, the ncp115 employs the dynamic quiescent current adjustment for very low i q consumption at no?load. features ? operating input voltage range: 1.7 v to 5.5 v ? available in fixed voltage options: 0.8 v to 3.6 v contact factory for other voltage options ? very low quiescent current of typ. 50 a ? soft start feature with two v out slew rate speed ? standby current consumption: typ. 0.1 a ? low dropout: 250 mv typical at 300 ma @ 2.8 v ? 1% accuracy at room temperature ? high power supply ripple rejection: 70 db at 1 khz ? thermal shutdown and current limit protections ? available in xdfn4 and tsop?5 packages ? stable with a 1 f ceramic output capacitor ? these are pb?free devices typical applicaitons ? pdas, mobile phones, gps, smartphones ? wireless handsets, wireless lan, bluetooth ? , zigbee ? ? portable medical equipment ? other battery powered applications figure 1. typical application schematic ncp115 in en out gnd off on v out c out 1 f ceramic c in v in marking diagrams see detailed ordering, marking and shipping information on page 14 of this data sheet. ordering information pin connections xx = specific device code m = date code 34 1 2 gnd out en in (bottom view) xdfn4 case 711aj xx m 1 www. onsemi.com xx = device code m = date code* = pb?free package xx m 1 5 (note: microdot may be in either location) *date code orientation and/or position may vary depending upon manufacturing location. tsop?5 case 483 out in gnd n/c en 1 2 3 4 5 (top view) 1 1 5
ncp115 www. onsemi.com 2 in out bandgap reference active discharge* mosfet driver with current limit thermal shutdown enable logic gnd auto low power mode en en figure 2. simplified schematic block diagram *active output discharge function is present only in ncp115a and ncp115c devices. yyy denotes the particular v out option. pin function description pin no. (xdfn4) pin no. (tsop5) pin name description 1 5 out regulated output voltage pin. a small ceramic capacitor with minimum value of 1 f is need- ed from this pin to ground to assure stability. 2 2 gnd power supply ground. 3 3 en driving en over 0.9 v turns on the regulator. driving en below 0.4 v puts the regulator into shutdown mode. 4 1 in input pin. a small capacitor is needed from this pin to ground to assure stability. ? 4 n/c not connected. this pin can be tied to ground to improve thermal dissipation. ? ? epad exposed pad should be connected directly to the gnd pin. soldered to a large ground cop- per plane allows for effective heat removal. absolute maximum ratings rating symbol value unit input voltage (note 1) v in ?0.3 v to 6 v v output voltage v out ?0.3 v to v in + 0.3 v or 6 v v enable input v en ?0.3 v to 6 v v output short circuit duration t sc s maximum junction temperature t j(max) 150 c storage temperature t stg ?55 to 150 c esd capability, human body model (note 2) esd hbm 2000 v esd capability, machine model (note 2) esd mm 200 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristics and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per eia/jesd22?a114, esd machine model tested per eia/jesd22?a115, latchup current maximum rating tested per jedec standard: jesd78. thermal characteristics (note 3) rating symbol value unit thermal characteristics, xdfn4 1x1 mm thermal resistance, junction?to?air r ja 208 c/w thermal characteristics, tsop?5 thermal resistance, junction?to?air r ja 162 c/w 3. single component mounted on 1 oz, fr 4 pcb with 645 mm 2 cu area.
ncp115 www. onsemi.com 3 electrical characteristics ?40 c t j 85 c; v in = v out(nom) + 1 v for v out options greater than 1.5 v. otherwise v in = 2.5 v, whichever is greater; i out = 1 ma, c in = c out = 1 f, unless otherwise noted. v en = 0.9 v. typical values are at t j = +25 c. min./max. are for t j = ?40 c and t j = +85 c respectively (note 4). parameter test conditions symbol min typ max unit operating input voltage v in 1.7 5.5 v output voltage accuracy ?40 c t j 85 c v out 2.0 v v out ?40 +40 mv v out > 2.0 v ?2 +2 % line regulation v out + 0.5 v v in 5.5 v (v in 1.7 v) reg line 0.01 0.1 %/v load regulation ? xdfn4 package i out = 1 ma to 300 ma reg load 12 30 mv load regulation ? tsop?5 package 28 45 dropout voltage ? xdfn4 package (note 5) i out = 300 ma v out = 1.8 v v do 425 560 mv v out = 2.8 v 250 320 v out = 3.3 v 215 260 dropout voltage ? tsop?5 package (note 5) i out = 300 ma v out = 1.8 v v do 445 580 mv v out = 2.8 v 270 340 v out = 3.3 v 235 280 output current limit v out = 90% v out(nom) i cl 300 600 ma quiescent current i out = 0 ma i q 50 95 a shutdown current v en 0.4 v, v in = 5.5 v i dis 0.01 1 a en pin threshold voltage high threshold low threshold v en voltage increasing v en voltage decreasing v en_hi v en_lo 0.9 0.4 v v out slew rate (note 6) v out = 3.3 v, i out = 10 ma normal (version a and b) v out_sr 190 mv/ s slow (version c and d) 20 en pin input current v en = 5.5 v i en 0.3 1.0 a power supply rejection ratio v in = 3.8 v, v out = 3.5 v i out = 10 ma f = 1 khz psrr 70 db output noise voltage f = 10 hz to 100 khz v n 70 v rms thermal shutdown temperature temperature increasing from t j = +25 c t sd 160 c thermal shutdown hysteresis temperature falling from t sd t sdh 20 c active output discharge resistance v en < 0.4 v, version a and c only r dis 100 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. performance guaranteed over the indicated operating temperature range by design and/or characterization. production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 5. characterized when v out falls 100 mv below the regulated voltage at v in = v out(nom) + 1 v. 6. please refer opn to determine slew rate. ncp115a, ncp115b ? normal speed. ncp115c, ncp115d ? slower speed
ncp115 www. onsemi.com 4 typical characteristics figure 3. output voltage vs. temperature ? v out = 1.2 v ? xdfn4 figure 4. output voltage vs. temperature ? v out = 1.8 v ? xdfn4 t j , junction temperature ( c) t j , junction temperature ( c) 80 60 40 20 0 ?20 ?40 1.170 1.180 1.190 1.200 1.210 1.220 1.770 1.775 1.785 1.790 1.800 figure 5. output voltage vs. temperature ? v out = 2.8 v ? xdfn4 figure 6. output voltage vs. temperature ? v out = 3.3 v ? xdfn4 t j , junction temperature ( c)) t j , junction temperature ( c) 2.770 2.780 2.785 2.790 2.800 2.805 2.815 2.820 3.260 3.265 3.275 3.280 3.290 3.295 3.305 3.310 figure 7. line regulation vs. temperature figure 8. load regulation vs. temperature ? xdfn4 t j , junction temperature ( c) t j , junction temperature ( c) 0 0.001 0.002 0.004 0.005 0 4 6 8 12 14 18 20 v out , output voltage (v) v out , output voltage (v) v out , output voltage (v) v out , output voltage (v) reg line , line regulation (%/v) reg load , load regulation (mv) i out = 10 ma i out = 300 ma v in = 2.5 v v out = 1.2 v c in = 1 f c out = 1 f i out = 10 ma i out = 300 ma v in = 2.8 v v out = 1.8 v c in = 1 f c out = 1 f ?10 10 90 70 50 30 ?30 1.175 1.185 1.195 1.205 1.215 i out = 10 ma i out = 300 ma v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f i out = 10 ma i out = 300 ma v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f 80 60 40 20 0 ?20 ?40 ?10 10 90 70 50 30 ?30 1.780 1.795 1.805 1.810 1.815 1.820 80 60 40 20 0 ?20 ?40 ?10 10 90 70 50 30 ?30 80 60 40 20 0 ?20 ?40 ?10 10 90 70 50 30 ?30 3.300 3.270 3.285 2.775 2.795 2.810 80 60 40 20 0 ?20 ?40 ?10 10 90 70 50 30 ?30 80 60 40 20 0 ?20 ?40 ?10 10 90 70 50 30 ?30 v in = v out_nom + 0.5 to 5.5 v v out = 1.8 v c in = 1 f c out = 1 f v out = 1.2 v 0.003 ?0.001 ?0.002 ?0.003 ?0.004 ?0.005 v out = 1.8 v v out = 2.8 v v out = 3.3 v 16 10 2 v in = v out_nom + 1 v i out = 1 ma to 300 ma c in = 1 f c out = 1 f v out = 1.2 v v out = 1.8 v v out = 2.8 v v out = 3.3 v
ncp115 www. onsemi.com 5 typical characteristics figure 9. ground current vs. load current figure 10. quiescent current vs. input voltage v out = 1.8 v i out , output current (ma) v in , input voltage (v) 1000 100 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 5 4 36 2 1 0 0 7 21 28 35 49 56 70 figure 11. dropout voltage vs. load current ? v out = 1.8 v figure 12. dropout voltage vs. load current ? v out = 2.8 v i out , output current (ma) i out , output current (ma) 300 250 200 150 100 50 0 0 50 150 200 250 300 400 500 300 250 200 150 100 50 0 0 35 105 140 210 245 280 350 figure 13. dropout voltage vs. load current ? v out = 3.3 v figure 14. current limit vs. temperature i out , output current (ma) t j , junction temperature ( c) 300 250 200 150 100 50 0 0 30 90 120 180 210 270 300 80 60 40 20 10 0 ?20 ?40 520 540 580 600 640 680 700 720 i gnd , ground current ( a) i q , quiescent current ( a) v do , dropout voltage (mv) v drop , dropout voltage (mv) v drop , dropout voltage (mv) i cl , current limit (ma) v in = 4.3 v v out = 90% v out(nom) c in = 1 f c out = 1 f 660 620 560 ?10 ?30 30 50 90 70 v out = 3.3 v c in = 1 f c out = 1 f meas for v out_nom ? 100 mv 60 150 240 t j = 85 c t j = ?40 c t j = 25 c v out = 1.8 v c in = 1 f c out = 1 f meas for v out_nom ? 100 mv t j = 85 c t j = ?40 c t j = 25 c v out = 2.8 v c in = 1 f c out = 1 f meas for v out_nom ? 100 mv t j = 85 c t j = ?40 c t j = 25 c 100 350 450 70 175 315 v in = 2.8 v v out = 1.8 v i out = 0 ma c in = 1 f c out = 1 f t j = 85 c t j = ?40 c t j = 25 c 14 42 63 t j = 85 c t j = ?40 c t j = 25 c v in = v out_nom + 1 v c in = 1 f c out = 1 f
ncp115 www. onsemi.com 6 typical characteristics figure 15. short circuit current vs. temperature figure 16. enable thresholds voltage t j , junction temperature ( c) t j , junction temperature ( c) 80 60 40 20 0 ?20 ?40 500 520 560 580 600 640 660 700 0 0.1 0.3 0.4 0.5 0.7 0.8 1.0 figure 17. current to enable pin vs. temperature figure 18. disable current vs. temperature t j , junction temperature ( c) t j , junction temperature ( c) 0 25 75 100 150 175 200 250 0 3 9 12 15 21 27 30 figure 19. discharge resistance vs. temperature figure 20. maximum c out esr value vs. load current t j , junction temperature ( c) i out , output current (ma) 0 10 30 40 60 70 80 100 300 250 200 150 100 50 0 0.1 1 10 100 i sc , short circuit current (ma) i en , enable pin current (na) i dis , disable current (na) r dis , discharge resistivity ( ) esr ( ) v in = 4.3 v v out = 0 v (short) c in = 1 f c out = 1 f 540 620 680 ?10 ?30 10 90 70 50 30 v en , enable voltage threshold (v) 0.2 0.6 0.9 80 60 40 20 0 ?20 ?40 ?10 ?30 10 90 70 50 30 v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f 80 60 40 20 0 ?20 ?40 ?10 ?30 10 90 70 50 30 80 60 40 20 0 ?20 ?40 ?10 ?30 10 90 70 50 30 v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f 50 125 225 v in = 4.3 v v out = 0 v c in = 1 f c out = 1 f v en = 1 v 6 18 24 unstable operation stable operation 20 50 90 80 60 40 20 0 ?20 ?40 ?10 ?30 10 90 70 50 30 v in = 4.3 v v out = 3.3 v c in = 1 f c out = 1 f off on on off
ncp115 www. onsemi.com 7 typical characteristics figure 21. output voltage noise spectral density ? v out = 1.2 v frequency (hz) 10m 1m 100k 10k 1k 100 10 0.001 0.01 0.1 1 10 figure 22. output voltage noise spectral density ? v out = 2.8 v frequency (hz) figure 23. output voltage noise spectral density ? v out = 3.3 v frequency (hz) noise spectral density ( v/ hz ) rms output noise ( v rms ) i out 1 ma 10 ma 300 ma 10 hz ? 100 khz 65.6 63.1 62.3 100 hz ? 100 khz 61.9 59.5 60.3 rms output noise ( v rms ) i out 1 ma 10 ma 300 ma 10 hz ? 100 khz 93.4 92.1 119.3 100 hz ? 100 khz 87.9 86.6 115.6 rms output noise ( v rms ) i out 1 ma 10 ma 300 ma 10 hz ? 100 khz 104.0 102.9 131.4 100 hz ? 100 khz 98.0 96.7 127.0 10m 1m 100k 10k 1k 100 10 0.001 0.01 0.1 1 10 10m 1m 100k 10k 1k 100 10 0.001 0.01 0.1 1 10 v in = 2.5 v v out = 1.2 v c in = 1 f (mlcc) c out = 1 f (mlcc) v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) v in = 4.3 v v out = 3.3 v c in = 1 f (mlcc) c out = 1 f (mlcc) i out = 1 ma i out = 10 ma i out = 300 ma i out = 1 ma i out = 10 ma i out = 300 ma i out = 1 ma i out = 10 ma i out = 300 ma noise spectral density ( v/ hz ) noise spectral density ( v/ hz )
ncp115 www. onsemi.com 8 typical characteristics figure 24. power supply rejection ratio, v out = 1.2 v figure 25. power supply rejection ratio, v out = 1.8 v frequency (hz) frequency (hz) 10m 1m 100k 10k 1k 100 0 10 30 40 60 70 90 100 10m 1m 100k 10k 1k 100 0 10 30 40 60 70 80 100 figure 26. power supply rejection ratio, v out = 2.8 v figure 27. power supply rejection ratio, v out = 3.3 v frequency (hz) frequency (hz) 10m 1m 100k 10k 1k 100 0 10 30 40 50 70 80 100 10m 1m 100k 10k 1k 100 0 20 30 50 60 70 90 100 rr, ripple rejection (db) rr, ripple rejection (db) rr, ripple rejection (db) rr, ripple rejection (db) 20 50 80 20 60 90 80 40 10 20 50 90 v in = 2.5 v + 100 mvpp v out = 1.2 v c in = none c out = 1 f (mlcc) i out = 1 ma i out = 10 ma i out = 150 ma i out = 300 ma v in = 2.8 v + 100 mvpp v out = 1.8 v c in = none c out = 1 f (mlcc) i out = 1 ma i out = 10 ma i out = 150 ma i out = 300 ma v in = 3.8 v + 100 mvpp v out = 2.8 v c in = none c out = 1 f (mlcc) i out = 1 ma i out = 10 ma i out = 150 ma i out = 300 ma v in = 4.3 v + 100 mvpp v out = 3.3 v c in = none c out = 1 f (mlcc) i out = 1 ma i out = 10 ma i out = 150 ma i out = 300 ma
ncp115 www. onsemi.com 9 typical characteristics figure 28. enable turn?on response ? i out = 0 ma, slow option ? c figure 29. enable turn?on response ? i out = 300 ma, slow option ? c figure 30. v out slew?rate comparison a and c option ? i out = 10 ma figure 31. v out slew?rate comparison a and c option ? i out = 300 ma figure 32. line transient response ? i out = 10 ma figure 33. line transient response ? i out = 300 ma 50 s/div 100 s/div 500 mv/div v en i input v out 500 mv/div 50 ma/div 50 ma/div v in = 2.8 v v out = 1.8 v c out = 1 f (mlcc) v en i input v out 500 mv/div 500 mv/div v in = 2.8 v v out = 1.8 v c out = 1 f (mlcc) 200 s/div 200 s/div 500 mv/div v en i input v out 500 mv/div 100 ma/div 100 ma/div v in = 2.8 v v out = 1.8 v c out = 1 f (mlcc) v en i input v out 500 mv/div 500 mv/div v in = 2.8 v v out = 1.8 v c out = 1 f (mlcc) a option c option a option c option 10 s/div 10 s/div 500 mv/div v in 3.0 v v out 20 mv/div 2.0 v 500 mv/div 20 mv/div 3.0 v 2.0 v v in v out t rise,fall = 1 s v out = 1.2 v c in = 1 f (mlcc) c out = 1 f (mlcc) v out = 1.2 v c in = 1 f (mlcc) c out = 1 f (mlcc) t rise,fall = 1 s
ncp115 www. onsemi.com 10 typical characteristics figure 34. line transient response ? i out = 10 ma figure 35. line transient response ? i out = 300 ma figure 36. load transient response ? v out = 1.2 v figure 37. load transient response ? v out = 1.2 v figure 38. load transient response ? v out = 2.8 v figure 39. load transient response ? v out = 2.8 v 5 s/div 10 s/div 100 ma/div 20 mv/div 100 ma/div 20 mv/div i out v out t rise = 1 s i out v out t fall = 1 s c out = 1 f 10 s/div 10 s/div 500 mv/div v in 4.8 v v out 3.8 v 500 mv/div 20 mv/div 4.8 v 3.8 v v in v out t rise,fall = 1 s v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) t rise,fall = 1 s 20 mv/div c out = 4.7 f v in = 2.5 v v out = 1.2 v c in = 1 f (mlcc) i out = 1 ma to 300 ma c out = 1 f c out = 4.7 f v in = 2.5 v v out = 1.2 v c in = 1 f (mlcc) i out = 1 ma to 300 ma 5 s/div 10 s/div v out 20 mv/div 100 ma/div 20 mv/div v out i out v in = 3.8 v, v out = 2.8 v c in = 1 f (mlcc) c out = 1 ma to 300 ma t rise = 1 s i out v in = 3.8 v, v out = 2.8 v c in = 1 f (mlcc) i out = 1 ma to 300 ma t fall = 1 s c out = 1 f c out = 4.7 f c out = 1 f c out = 4.7 f 100 ma/div
ncp115 www. onsemi.com 11 typical characteristics figure 40. load transient response ? v out = 3.3 v figure 41. load transient response ? v out = 3.3 v figure 42. turn?on/off ? slow rising v in ? i out = 10 ma figure 43. turn?on/off ? slow rising v in ? i out = 300 ma 5 s/div 10 s/div figure 44. overheating protection ? tsd 5 ms/div 10 ms/div 100 ma/div v out 20 mv/div 100 ma/div 20 mv/div 500 mv/div 100 mv/div i out v out 500 mv/div v out tsd on v out i out v in = 4.3 v, v out = 3.3 v c in = 1 f (mlcc) i out = 1 ma to 300 ma t rise = 1 s i out v in = 4.3 v, v out = 3.3 v c in = 1 f (mlcc) i out = 1 ma to 300 ma t fall = 1 s tsd off v in v in = 3.8 v v out = 3.3 v c in = 1 f (mlcc) c out = 1 f (mlcc) v in = 5.5 v, v out = 1.8 v c in = 1 f (mlcc), c out = 1 f (mlcc) c out = 1 f c out = 4.7 f c out = 1 f c out = 4.7 f 10 ms/div 500 mv/div v out v in v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc)
ncp115 www. onsemi.com 12 applications information general the ncp115 is a high performance 300 ma low dropout linear regulator. this device delivers very high psrr (over 70 db at 1 khz) and excellent dynamic performance as load/line transients. in connection with very low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. the device is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. input capacitor selection (c in ) it is recommended to connect at least a 1 f ceramic x5r or x7r capacitor as close as possible to the in pin of the device. this capacitor will provide a low impedance path for unwanted ac signals or noise modulated onto constant input voltage. there is no requirement for the min. /max. esr of the input capacitor but it is recommended to use ceramic capacitors for their low esr and esl. a good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. larger input capacitor may be necessary if fast and large load transients are encountered in the application. output decoupling (c out ) the ncp115 requires an output capacitor connected as close as possible to the output pin of the regulator. the recommended capacitor value is 1 f and x7r or x5r dielectric due to its low capacitance variations over the specified temperature range. the ncp115 is designed to remain stable with minimum effective capacitance of 0.47 f to account for changes with temperature, dc bias and package size. especially for small package size capacitors such as 0402 the effective capacitance drops rapidly with the applied dc bias. there is no requirement for the minimum value of equivalent series resistance (esr) for the c out but the maximum value of esr should be less than 1.8 . larger output capacitors and lower esr could improve the load transient response or high frequency psrr. it is not recommended to use tantalum capacitors on the output due to their large esr. the equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. enable operation the ncp115 uses the en pin to enable/disable its device and to deactivate/activate the active discharge function. if the en pin voltage is <0.4 v the device is guaranteed to be disabled. the pass transistor is turned?off so that there is virtually no current flow between the in and out. the active discharge transistor is active so that the output voltage v out is pulled to gnd through a 100 resistor. in the disable state the device consumes as low as typ. 10 na from the v in . if the en pin voltage >0.9 v the device is guaranteed to be enabled. the ncp115 regulates the output voltage and the active discharge transistor is turned?off. the en pin has internal pull?down current source with typ. value of 300 na which assures that the device is turned?off when the en pin is not connected. in the case where the en function isn?t required the en should be tied directly to in. output current limit output current is internally limited within the ic to a typical 600 ma. the ncp115 will source this amount of current measured with a voltage drops on the 90% of the nominal v out . if the output voltage is directly shorted to ground (v out = 0 v), the short circuit protection will limit the output current to 630 ma (typ). the current limit and short circuit protection will work properly over whole temperature range and also input voltage range. there is no limitation for the short circuit duration. thermal shutdown when the die temperature exceeds the thermal shutdown threshold (t sd ? 160 c typical), thermal shutdown event is detected and the device is disabled. the ic will remain in this state until the die temperature decreases below the thermal shutdown reset threshold (t sdu ? 140 c typical). once the ic temperature falls below the 140 c the ldo is enabled again. the thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. this protection is not intended to be used as a substitute for proper heat sinking. power dissipation as power dissipated in the ncp115 increases, it might become necessary to provide some thermal relief. the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. the maximum power dissipation the ncp115 can handle is given by: p d(max) 125 c t a ja (eq. 1) the power dissipated by the ncp115 for given application conditions can be calculated from the following equations: p d v in i gnd @i out i out v in v out (eq. 2)
ncp115 www. onsemi.com 13 figure 45. ja and p d (max) vs. copper area (csp4) 0.20 0.26 0.32 0.38 0.44 0.56 0.62 0.74 0.80 0 70 105 175 210 245 280 315 350 0 100 200 300 400 500 600 700 pcb copper area (mm 2 ) ja , junction to ambient thermal resistance ( c/w) p d(max) , maximum power dissipation (w) ja , 2 oz cu ja , 1 oz cu p d(max) , t a = 25 c, 1 oz cu p d(max) , t a = 25 c, 2 oz cu 0.50 0.68 140 35 figure 46. ja and p d (max) vs. copper area (xdfn4) 0 0.4 0.5 0.6 0.8 0.7 0.9 1.0 0 25 75 125 175 200 225 250 0 100 200 300 400 500 600 700 copper heat spreader area (mm 2 ) ja , junction to ambient thermal resistance ( c/w) p d(max) , maximum power dissipation (w) ja , 2 oz cu ja , 1 oz cu p d(max) , t a = 25 c, 1 oz cu p d(max) , t a = 25 c, 2 oz cu 0.3 0.2 0.1 150 50 100
ncp115 www. onsemi.com 14 reverse current the pmos pass transistor has an inherent body diode which will be forward biased in the case that v out > v in . due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. power supply rejection ratio the ncp115 features very good power supply rejection ratio. if desired the psrr at higher frequencies in the range 100 khz ? 10 mhz can be tuned by the selection of c out capacitor and proper pcb layout. turn?on time the turn?on time is defined as the time period from en assertion to the point in which vout will reach 98% of its nominal value. this time is dependent on various application conditions such as v out(nom) c out and t a . the ncp115 provides two options of v out ramp?up time. the ncp115a and ncp115b have normal slew rate, typical 190 mv/ s and ncp115c and ncp115d provide slower option with typical value 20 mv/ s which is suitable for camera sensor and other sensitive devices. pcb layout recommendations to obtain good transient performance and good regulation characteristics place c in and c out capacitors close to the device pins and make the pcb traces wide. in order to minimize the solution size, use 0402 capacitors. larger copper area connected to the pins will also improve the device thermal resistance. the actual power dissipation can be calculated from the equation above (equation 2). expose pad should be tied the shortest path to the gnd pin. ordering information ? xdfn4 package device voltage option marking description package shipping ncp115amx105tcg 1.05 v qm 300 ma, active discharge, normal slew?rate xdfn4 (pb?free) 3000 / tape & reel ncp115amx110tcg 1.1 v ql ncp115amx120tcg 1.2 v qa ncp115amx150tcg 1.5 v qe ncp115amx180tcg 1.8 v qc ncp115amx250tcg 2.5 v qf ncp115amx280tcg 2.8 v qg ncp115amx300tcg 3.0 v qk ncp115amx330tcg 3.3 v qh ncp115amx360tcg 3.6 v qj ncp115cmx105tcg 1.05 v rm 300 ma, active discharge, slow slew?rate ncp115cmx110tcg 1.1 v rf ncp115cmx110tbg 1.1 v rf ncp115cmx120tcg 1.2 v re NCP115CMX120TBG 1.2 v re ncp115cmx150tcg 1.5 v rg ncp115cmx180tcg 1.8 v ra ncp115cmx180tbg 1.8 v ra ncp115cmx250tcg 2.5 v rh ncp115cmx280tcg 2.8 v rc ncp115cmx280tbg 2.8 v rc ncp115cmx300tcg 3.0 v rk ncp115cmx330tcg 3.3 v rd ncp115cmx360tcg 3.6 v rj
ncp115 www. onsemi.com 15 ordering information ? tsop?5 package device voltage option marking description package shipping ncp115asn105t1g 1.05 v qac 300 ma, active discharge, normal slew?rate tsop?5 (pb?free) 3000 / tape & reel ncp115asn110t1g 1.1 v qad ncp115asn120t1g 1.2 v qae ncp115asn150t1g 1.5 v qaf ncp115asn180t1g 1.8 v qaa ncp115asn250t1g 2.5 v qag ncp115asn280t1g 2.8 v qah ncp115asn300t1g 3.0 v qaj ncp115asn330t1g 3.3 v qak ncp115csn105t1g 1.05 v qcc 300 ma, active discharge, slow slew?rate ncp115csn110t1g 1.1 v qcd ncp115csn120t1g 1.2 v qce ncp115csn150t1g 1.5 v qcf ncp115csn180t1g 1.8 v qca ncp115csn250t1g 2.5 v qcg ncp115csn280t1g 2.8 v qch ncp115csn300t1g 3.0 v qcj ncp115csn330t1g 3.3 v qck
ncp115 www. onsemi.com 16 package dimensions tsop?5 case 483 issue m 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimension a. 5. optional construction: an additional trimmed lead is allowed in this location. trimmed lead not to extend more than 0.2 from body. dim min max millimeters a b c 0.90 1.10 d 0.25 0.50 g 0.95 bsc h 0.01 0.10 j 0.10 0.26 k 0.20 0.60 m 0 10 s 2.50 3.00 123 54 s a g b d h c j 0.20 5x c ab t 0.10 2x 2x t 0.20 note 5 c seating plane 0.05 k m detail z detail z top view side view a b end view 1.35 1.65 2.85 3.15
ncp115 www. onsemi.com 17 package dimensions xdfn4 1.0x1.0, 0.65p case 711aj issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.20 mm from the terminal tips. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 bottom view b e 4x note 3 2x 0.05 c pin one reference top view 2x 0.05 c a a1 (a3) 0.05 c 0.05 c c seating plane side view l 4x 1 2 dim min max millimeters a 0.33 0.43 a1 0.00 0.05 a3 0.10 ref b 0.15 0.25 d 1.00 bsc d2 0.43 0.53 e 1.00 bsc e 0.65 bsc l 0.20 0.30 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. mounting footprint* 1.20 0.26 0.24 4x dimensions: millimeters 0.39 recommended package outline note 4 e/2 d2 45 a m 0.05 b c 4 3 0.65 pitch detail a 4x b2 0.02 0.12 l2 0.07 0.17 4x 0.52 2x 0.11 4x l2 4x detail a b2 4x on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 ncp115/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ? bluetooth is a registered trademark of bluetooth sig. zigbee is a registered trademark of zigbee alliance.

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